Selaus tekijän mukaan kokoelmassa "Yu, Wensong"Väitöskirjat

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    • Applicability of GaN high electron mobility transistors in a high-speed drive system 

      Järvisalo, Heikki
      Acta Universitatis Lappeenrantaensis (Lappeenranta-Lahti University of Technology LUT, 10.02.2020)
      Lossless operation and instantaneous switching are properties of an ideal power electronic switch. Wide band gap devices based on gallium nitride (GaN) are the current peak performers in regard to losses and switching ...