Aineistot 1-1 / 1
Applicability of GaN high electron mobility transistors in a high-speed drive system
(Lappeenranta-Lahti University of Technology LUT, 2020-02-10)
Lossless operation and instantaneous switching are properties of an ideal power elec-tronic switch. Wide band gap devices based on gallium nitride (GaN) are the current peak performers in regard to losses and switching ...