Wide bandgap (WBG) semiconductors in power electronics : the future of electric vehicles
Wan, Yimeng (2024)
Kandidaatintyö
2024
School of Energy Systems, Sähkötekniikka
Kaikki oikeudet pidätetään.
Julkaisun pysyvä osoite on
https://urn.fi/URN:NBN:fi-fe2024050325455
https://urn.fi/URN:NBN:fi-fe2024050325455
Tiivistelmä
In recent years, the solutions of sustainable energy and environmentally friendly transport is more and more important for our earth. The development and diffusion of electric vehicles (EVs) has become an important way to decrease the pollution and improve the energy efficiency. In this context, the technology of WBG semiconductor, especially gallium nitride (GaN) and silicon carbide (SiC) devices, has proven large potential to improve electric vehicles’ performance. This study’s purpose is to learn the use of GaN and SiC semiconductors to the electric vehicles and charging systems. And analysis them how to decrease then loss of energy. Then improve the total energy efficiency and driving range by decreasing then loss of energy.
Through the review of literature and the study of the case, this essay analysed the physical properties of WBG semiconductor technology, the efficiency of advantage, and the specific examples of electric vehicles’ use deeply. This essay also compared WBG devices and traditional silicon-based devices’ loss. The difference between thermal management and size reduction’s performance. By this study, the essay evaluates the use of WBG technology to the range of electric vehicles.
As the main research results shows, GaN and SiC semiconductors has special advantages of performance on high pressure and high temperature environment. And it can also decrease the energy losses of electric vehicle power electronic equipment. More specifically, these WBG devices can improve the charging efficiency of electric vehicles, reduce charging time and increase range by reducing energy losses. However, despite these obvious benefits, the widespread use of WBG semiconductors is hampered by cost and manufacturing process issues.
It is concluded that although gallium nitride and silicon carbide semiconductor technologies have great potential for application in the electric vehicle industry, further research and development in the areas of cost control, supply chain management and technology standardisation are required to achieve commercialisation and scale-up of these technologies.
Through the review of literature and the study of the case, this essay analysed the physical properties of WBG semiconductor technology, the efficiency of advantage, and the specific examples of electric vehicles’ use deeply. This essay also compared WBG devices and traditional silicon-based devices’ loss. The difference between thermal management and size reduction’s performance. By this study, the essay evaluates the use of WBG technology to the range of electric vehicles.
As the main research results shows, GaN and SiC semiconductors has special advantages of performance on high pressure and high temperature environment. And it can also decrease the energy losses of electric vehicle power electronic equipment. More specifically, these WBG devices can improve the charging efficiency of electric vehicles, reduce charging time and increase range by reducing energy losses. However, despite these obvious benefits, the widespread use of WBG semiconductors is hampered by cost and manufacturing process issues.
It is concluded that although gallium nitride and silicon carbide semiconductor technologies have great potential for application in the electric vehicle industry, further research and development in the areas of cost control, supply chain management and technology standardisation are required to achieve commercialisation and scale-up of these technologies.