Features of temperature dependences electrical resistance of Bi88.08Mn11.92 in magnetic fields

Abstract

The temperature dependences of the electrical resistance of the solid solution of Bi88.08Mn11.92 in the temperature range of 2-300 K and magnetic fields up to 90 kOe for both H  I and H I are studied. It has been shown that in a magnetic field, the temperature dependences of the electrical resistance of Bi88.08Mn11.92 show maxima (insulator-metal transition) for both the H  I and H I orientations. The temperatures of the maxima increase with increasing field. The appearance of a noticeable difference between the temperature dependences of the electrical resistances of Bi88.08Mn11.92 and the compound Bi95.69Mn3.69Fe0.62 with a lower manganese content and pure bismuth is discussed. It has been established that the magnetoresistance of Bi88.08Mn11.92 is positive over the entire temperature range studied and reaches a value of 3290% in a magnetic field of 90 kOe for H  I, which is approximately 400% higher than in the Bi95.69Mn3.69Fe0.62 compound with lower Mn content. A suggestion has been made that the peculiarities temperature dependences behavior of the electrical resistance of Bi88.08Mn11.92 without a magnetic field and in the field, are largely due to the influence of internal magnetism of the BiMn phase and can be explained within the framework of the multiband theory.