Review on Silicon Carbide based High-Fundamental Frequency Inverters for High-Speed Drives

Abstract

This article provides a comprehensive review of Silicon Carbide (SiC) based inverters designed for High-Speed (HS) drive applications, which require higher output frequencies to enhance efficiency and power density. The review analyzes approximately 70 recent three-phase SiC inverter designs, categorizing them by topology, specifically two-level, Neutral Point Clamped (NPC), T-type, and Multilevel—and discussing their advantages, limitations, and emerging trends. It also examines key design considerations, including the selection of fundamental and switching frequencies, optimization of DC-link voltage, and thermal management. Furthermore, the paper reviews industrial SiC prototypes, recent advancements in SiC device technologies, and various configurations (discrete, parallel, and module), highlighting the advantages and challenges associated with each approach. The analysis identifies a research gap in the development of high-power inverters (greater than 1 MW) capable of operating above 1 kHz fundamental frequencies. The paper concludes by outlining future research directions aimed at advancing SiC inverter technology for HS drives.